Accordingly, the switching behaviors can be described as follows. The as-prepared ZnO microwire is insulating and contains many TGF beta inhibitor oxygen vacancy traps. Under the driving of a forming voltage, the abundant oxygen vacancies would be driven toward the cathode to assemble a conducting channel through the microwire’s grain boundaries, and hence, the device switches from the off to the on state. That is, the defects align to form tiny conducting filaments in the HRS and these tiny conducting filaments gather together to form stronger and more conducting filaments leading to the transition

to the LRS. However, with the limit of compliance current, the loss of oxygen is not that serious that the HRS can be recovered through the redistribution of oxygen vacancies because of the passing of higher current and the Joule heating in the following voltage sweep, which corresponds to the

Erismodegib research buy https://www.selleckchem.com/products/nsc-23766.html reset process, whereas the so-called set process corresponds to the recovery of conductive filaments. Figure 4 HRTEM image for a tiny part in the ZnO microwire. Conclusions In summary, a memristor device with well unipolar resistive switching performances has been fabricated, for the first time, based on the single ZnO microwire and Ag electrodes. The single ZnO microwire memory is stable, rewritable, and nonvolatile with an on/off ratio over 1 × 103, operating voltages less than 1 V, and high-endurance Tangeritin stability. Abnormally, the reset voltages are observed to be larger than the set voltages. The resistive switching could be explained by conducting filamentary mechanism. The conduction mechanisms dominating the low- and high- resistance states are proposed to be ohmic behavior and space-charge-limited current, respectively. The simple structure, large on/off ratio, and bistable performance of the device make it very attractive for nonvolatile resistive switching memory applications. Acknowledgments This work

was financially supported by the National Basic Research Program of China (2014CB931700), NSFC (061222403, 51072081), the Doctoral Program Foundation of China (20123218110030), the Opened Fund of the State Key Laboratory on Integrated Optoelectronics (IOSKL2012KF06), and the Scientific Foundation of Jinling Institute of Technology (jit-b-201201, jit-b-201202, and jit-b-201203). References 1. Sawa A: Resistive switching in transition metal oxides. Mater Today 2008, 11:28–36.CrossRef 2. Szot K, Speier W, Bihlmayer G, Waser R: Switching the electrical resistance of individual dislocations in single-crystalline SrTiO3. Nat Mater 2006, 5:312–320. 3. Chang WY, Lai YC, Wu TB, Wang SF, Chen F, Tsai MJ: Unipolar resistive switching characteristics of ZnO thin films for nonvolatile memory applications. Appl Phys Lett 2008, 92:022110.CrossRef 4. Younis A, Chu D, Li S: Bi-stable resistive switching characteristics in Ti-doped ZnO thin films. Nanoscale Res Lett 2013, 8:154.