Nanoscale Res Lett 2013, 8:419.CrossRef 18.
Chen C, Song C, Yang J, Zeng F, Pan F: Oxygen migration induced resistive switching effect and its thermal stability in W/TaO x /Pt structure. Appl Phys Lett 2012, 100:253509.CrossRef 19. Lin CY, Wu CY, Hu C, Tseng TY: Bistable resistive switching in Al 2 O 3 memory thin AZD8931 chemical structure films. J Electrochem Soc 2007, 154:G189.CrossRef 20. Wu Y, Yu S, Lee B, Wong P: Low-power TiN/Al 2 O 3 /Pt resistive switching device with sub-20 μA switching current and gradual resistance modulation. J Appl Phys 2011, 110:094104.CrossRef 21. Banerjee W, Rahaman SZ, Prakash A, Maikap S: High-κ Al 2 O 3 /WO x bilayer dielectrics for low-power resistive switching memory applications. Jpn J Appl Phys 2011, 50:10PH01.CrossRef 22. Wang SY, Lee DY, Tseng TY, Lin CY: Effects of Ti top electrode thickness on the resistive switching behaviors of rf-sputtered ZrO 2 memory films. Appl Phys Lett 2009, 95:112904.CrossRef 23. Liu Q, Long S, Wang W, Tanachutiwat S, Li Y, Wang Q, Zhang M, Huo Z, Chen J, Liu M: Low-power and highly uniform switching in ZrO 2 -based ReRAM with a
Cu nanocrystal insertion layer. check details IEEE Electron Device Lett 2010, 31:1299. 24. Li Y, Long S, Lv H, Liu Q, Wang Y, Zhang S, Lian W, Wang M, Zhang K, Xie H, Liu S, Liu M: Improvement of resistive switching characteristics in ZrO 2 film by embedding a thin TiO x layer. Nanotechnology 2011, 22:254028.CrossRef 25. Chien WC, Chen YR, Chen YC, Aurora Kinase inhibitor Chuang ATH, Lee FM, Lin YY, Lai EK, Shih YH, Hsieh KY, Chih-Yuan L: A forming-free WO x resistive memory using a novel self-aligned field enhancement feature with excellent reliability and scalability. In Proceedings of the 2010 IEEE International Electron Devices Meeting (IEDM): Dec 6–8 2010; San Francisco. Piscataway: IEEE; 2010:440. 26. Prakash A, Jana D, Maikap S: TaO x -based resistive switching
memories: prospective and challenges. Nanoscale Res Lett 2013, 8:418.CrossRef 27. Prakash A, Maikap S, Banerjee W, Jana D, Lai Morin Hydrate CS: Impact of electrically formed interfacial layer and improved memory characteristics of IrO x /high-κ x /W structures containing AlO x , GdO x , HfO x , and TaO x switching materials. Nanoscale Res Lett 2013, 8:379.CrossRef 28. Prakash A, Maikap S, Lai CS, Tien TC, Chen WS, Lee HY, Chen FT, Kao MJ, Tsai MJ: Bipolar resistive switching memory using bilayer TaO x /WO x films. Solid State Electron 2012, 72:35.CrossRef 29. Huang YC, Tsai WL, Chou CH, Wan CY, Hsiao C, Cheng HC: High-performance programmable metallization cell memory with the pyramid-structured electrode. IEEE Elecron Device Lett 2013, 34:1244.CrossRef Competing interests The authors declare that they have no competing interests. Authors’ contributions AP carried out the fabrication, measurement, and analysis of the cross-point memory devices, and he wrote the manuscript under the instruction of SM.